We have investigated the effects of temperature and substrate miscut on the crystal linequality of metamorphic AlInAslayersgrownonaGaAssubstratebymetalorganicchemicalvapordeposition (MOCVD). The AlInAs layers grown at 700 degrees C show a much better crystall inequality than the ones grown at 675 degrees C, because a hightemperature can suppress phase separation and enhance the glide velocity of dislocations during the strain relaxation process. Compared with the miscuts of 21 and 71, the 151 miscut is more effective in suppressing phase separation during the growth of the AlInAs buffers. Theoretical calculations show that them is cut will facilitate the strain relaxation by dislocationg liding. These results indicate that a high growth temperature and a large miscut will improve the quality of the metamorphic AlInAs layers grown on the GaAs substrate by MOCVD. (C) 2013 Elsevier B.V. All rights reserved.