Previous Article Next Article Table of Contents Journal of Crystal Growth, Vol.387, 124-124, 2014 DOI10.1016/j.jcrysgro.2013.10.01.0 Export Citation Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy (vol 323, pg 13, 2011) Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M Please enable JavaScript to view the comments powered by Disqus.
