The 3C-SiC (111) was grown on on axis 6H-SiC substrates in a Lemperature interval ranging from 1675 degrees C where 3C-SiC nucleated, to 1825 degrees C where coverage of the substrate by 3C-SiC was nearly 100%. The 6H- to 3C-SiC transformation was not abrupt and two different transitions could be observed. The first one occurs before or during 3C-SiC nucleation and consists of 6H-, 3C-, 15R-SiC and other mixed stacking sequences. The second one appears due to 6H-SiC and 3C-SiC competition during the growth and results in needle-like interface. A proposed model elucidates connection between four-fold twins nucleating at the 6H-/3C-SiC interface and the formation of depressions at the surface of the 3C-SiC layer. (C) 2014 Elsevier B.V. All rights reserved.