Using a variable-temperature, ultrahigh vacuum scanning tunneling microscope (STM), we have studied the adsorption and STM induced desorption of NO from Si(111)-(7X7). NO adsorbs preferentially on faulted corner sites, followed by faulted center sites, unfaulted corner sites and unfaulted center sites. The preference for the different adsorption sites is independent of temperature and correlates well with the local density of states at these sites. NO can be desorbed from Si(111) with the STM. We present data that suggest the desorption is induced by the electric field under the STM tip. The threshold positive electric field for desorption of NO is 0.114 +/- 0.009 V/Angstrom. For sufficiently small tip-surface distances, NO can be desorbed locally without affecting the neighboring adsorbates.