RuO2 center dot xH(2)O nanorod arrays free-standing on Si wafers are prepared by an anodic aluminum oxide template assistant method. Pt nanograins in the size of 3-5 nm are deposited on the RuO2 center dot xH(2)O nanorod arrays uniformly by a cool sputtering approach. Electrochemical measurements indicate that, the Pt@RuO2 center dot xH(2)O nanorod arrays have larger electrochemical active areas (EAAs) and better poisoning resistant ability for methanol electro-oxidation, compared with Pt nanograins that deposited on Ti wafers directly (named Pt/Ti). The EAAs of Pt@RuO2 center dot xH(2)O and Pt/Ti electrodes are 40.6 and 31.1 m(2) g(-1), respectively. The poisoning rate of Pt@RuO2 center dot xH(2)O arrays is 8.9 x 10(-4)% per second, much smaller than that of Pt/Ti electrodes (3.4 x 10(-3)% per second). (C) 2013 Elsevier B.V. All rights reserved.