Highly oriented < 111 > and < 110 > beta-SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength=808nm) and HMDS (Si(CH3)(3)-Si(CH3)(3)) as a precursor. The effects of laser power (P-L), total pressure (P-tot), and deposition temperature (T-dep) on the orientation, microstructure, and deposition rate (R-dep) were investigated. The orientation of the beta-SiC films changed from < 111 > to random to < 110 > with increasing P-L and P-tot. The < 111 >-, randomly, and < 110 >-oriented beta-SiC films exhibited dense, cauliflower-like, and cone-like microstructures, respectively. Stacking faults were observed in the < 111 >- and < 110 >-oriented films, and aligned parallel to the (111) plane in the < 111 >-oriented film, whereas they were perpendicular to the (110) plane in the < 110 >-oriented film. The highest R-dep of the < 111 >-oriented beta-SiC film was 200m/h at P-tot=200Pa and T-dep=1420K, whereas that of the < 110 >-oriented film was 3600m/h at P-tot=600Pa and T-dep=1605K.