The formation of CuIn(1-x)GaxSe2 (CIGS) by electrochemical atomic layer deposition (E-ALD) is reported. Two different CIGS E-ALD cycle programs were investigated. The first consisted of the sequential deposition of alternating atomic layers (AL) metal and Se. That is, AL of Cu, In and Ga were alternated with AL of Se, in what is referred to as a quaternary CIGS program. The second was a superlattice program, composed of differing numbers of the binary compound cycles repeated in a period. The use of the superlattice program allowed better control of the overall stoichiometry. Electron probe microanalysis was used to characterize deposit compositions. A discussion of how variations in the deposition programs affected the resulting deposit compositions is presented. Deposits were formed with the classic CIGS stoichiometry (CuIn0.7Ga0.3Se2) using the superlattice program. XRD patterns for the E-ALD deposited chalcopyrite CIGS are reported as deposited, no annealing. (C) 2014 The Electrochemical Society. All rights reserved.