Li-Al-O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (T-dep) of 800-1300 K and molar ratios of Li to Al precursors (R-Li/Al) of 0.1-12. Single-phase alpha-LiAl5O8 films having faceted grains with pyramidal and polygonal shapes were obtained at T-dep = 1107-1280 K and R-Li/Al = 0.1-2.9. Single-phase gamma-LiAlO2 films having pyramidal grains were prepared at T-dep = 984-1238 K and R-Li/Al = 0.9-10.6. Under the conditions of T-dep = 923 K and R-Li/Al = 11.4, single-phase beta-Li5AlO4 films with a fluffy morphology were deposited. The highest deposition rate of Li-Al-O films was 98 mu m h(-1) with a mixture of gamma-LiAlO2 and beta-Li5AlO4 at T-dep = 944 K. (C) 2013 Elsevier B.V. All rights reserved.