The aim of the present work is to analyze some parameters of SiC crystals: shape, surface morphology acid residual stresses. The shape of the crystals depends on the construction of growth cavity. The change of geometry allowed to grow crystals with convex, concave or flat growth front. it is shown that a flat growth front should be used for excluding radial non-homogenity of doping impurities. The presence of considerable temperature gradients in the bulk crystals during their growing leads to arising mechanical stresses after cooling these crystals. By means of Raman scattering we estimated respective strain values that reach approximately 0.3 Gpa at the centre of the crystal.