Recently, the realization of making high-quality and large diameter bulk SIC crystal is required for the device application. In generally, the size of the bulk crystal is gradually enlarged by repeating the growth from small size substrate. It takes a long time to obtain a large size wafer. In stead of this conventional method, we made a new approach to realize a large diameter crystal by arranging the several substrates on the cap. In this method, we grew up bulk on putting two substrates,proved mechanism for groove narrowing and confirmed transition from bi-crystal to mono-crystal.