This paper focuses on the growth of epitaxial SiC layers using the hot-wall Chemical Vapour Deposition (CVD) technique. The relation between growth parameters as total flow, system pressure and C/Si ratio and the characteristics of unintentionally doped epitaxial layers such as thickness uniformity and background doping concentration have been investigated. Epitaxial layers with growth rates up to 11 mum/h with a thickness uniformity of about +/-4 % were grown on misoriented (0001) Si faces. The electrical conductivity of the layers changed from n- to p-type at a net doping level below 2x10(14) cm(-3), in accordance with the residual impurity concentration of the B and Al acceptors.