The surface morphology of epitaxial layers grown on low off-angle 4H-SiC (0001) substrates is investigated. The epitaxial growth is carried out using a horizontal, hot-wall type CVD reactor. The temperature range and pressure of both H(2) pre-growth etching and epitaxial growth are 1400 - 1600 degreesC and 188 Torr, respectively. Two kinds of surface features are observed. One is a stripe feature along the direction of <1 (1) over bar 00 > observed after pre-growth etching. The other is a triangular shaped feature observed after epitaxial growth. The stripe features are decreased by lowering the temperature and shortening the time of pre-growth etching. The triangular shaped features are decreased by adding C(3)H(8) during pre-growth etching.