Combined UV Raman and photoluminescence (PL) measurements have been performed on a series of N-doped n-tyFe 6H-SiC bulk wafers. The first order Raman transverse optical (TO) and longitudinal optical (LO) phone modes, the 2.9-eV near edge PL band, and the 2.2-eV defects-related band, can be detected at same runs at room temperature by using a high sensitive microscopic system. Their relative intensity ratios are varied with N-doping levels. Weak folded phonon modes and variations with N-dopings are observed, which might be related to the structural variation near the surface.