In order to get phosphorous doped SiC we irradiated 4H SiC samples with several neutron fluences of various energy distributions. After irradiation the samples were sucessively annealed between 1600 degreesC and 1750 degreesC and thereafter characterized by Fourier-Transform-InfraRed spectroscopy (FTIR) and Hall-effect experiments. We compared the ionization energies of 33 meV and 99 meV which we evaluated from Hall-effect with the absorption in the IR-region of 150 cm(-1) to 5000 cm(-1) We observed phosphorous-related and defect-related as well as vibronic and electronic absorptions.