Defects created by proton irradiation of n-type 4H-SiC epilayers with different fluences and six annealing steps were investigated by Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Three previously unreported hole traps with energy levels of E(V) + 0.35 eV, E(V) + 0.44 eV, E(V) + 0.80 eV and several electron traps were found. Annealing properties and dependence upon irradiation dose of majority and minority carrier traps is presented. High temperature stability of a E(V) + 0.35 eV trap has been demonstrated.