Intrinsic-related defect centers have been generated in n-type 4H/6H-SiC by bombardment with different particles like high-energy electrons (2 MeV), hydrogen (I-I), helium (He) or ions of heavier masses like neon (Ne) or argon (Ar). The annealing behavior of implantation-induced defects in 6H-SiC has been studied by DLTS investigations after annealing the samples at elevated temperatures. The E(1)/E(2)-, Z(1)/Z(2)(6H)- and R-center are the prevailing defect centers observed in DLTS spectra. The activation energy DeltaE(A) for the annihilation process of the Z(1)/Z(2)(4H)-center has been determined by isochronal annealing of e(-)-irradiated 4H-SiC samples.