Nitrogen (N)-dopzd 4H/6H-SiC epitaxial lavers have been grown by the Chemical Vapor Deposition (CVD) technique on SiC substrates of the same polytype under additional CO(2) flow. Deep level transient spectroscopy (DLTS;) spectra of these: epilayers reveal three energetically deep traps, identical with the defect centers O(III), O(IV), and O(V) observed in oxygen (O)-implanted 4H/6H-SiC samples. Admittance spectroscopy (AS) investigations result in the nitrogen donors (N(h), N(k(1),k(2))) and a double peak termed O(I)/O(II). This double peak is caused try two energetically shallow O-related donors. With increasing CO(2) flow, the concentration of O(I)/O(II) donors increases; however, this increase cannot explain the strong increase of the net donor concentration (N(D)-N(A)) determined by C-V measurements. It is suggested that the incorporation of nitrogen atoms during the CVD growth is enhanced by the presence of oxygen.