Bandgap states of Cr in p-type 4H-SiC (Silicon Carbide) were investigated by radiotracer-DLTS (Deep Level Transient Spectroscopy). Doping with the radioactive isotope (51)Cr was dune by recoil implantation followed by annealing (4h, 1600K). Repeated DLTS measurements during the elemental transmutation of the isotope to (51)V, reveal the corresponding concentration changes of bandgap states. In the lower part of the band gap accessible by these experiments, we find two Cr-releated levels at 0.53eV and 0.63eV above the valence band edge, and no level of Vanadium.