The intrinsic defects generated by high energy (12MeV) proton implantation in the trace region between the surface and the end of range have been studied by electron paramagnetic resonance spectroscopy (EPR), For ion doses in the 10(16)cm(-2) range we observe in n-type N doped 6H-SiC three paramagnetic defects, attributed to the negatively charged and the neutral silicon monovacancy on hexagonal and quasicubic sites. No carbon vacancy related defect is observed. The total introduction rate is 20cm(-1) and does not vary with dose. The simultaneous observation of the V(Si) in the - and 0 charge states. demonstrate that the Fermilevel is pinned by this defect in the electrically compensated samples. A correlation of the negatively charged V(Si) on hexagonal and quasicubic sites with the Z1/Z2 centers is proposed.