The electrical properties of Al, B, N implanted 6H-SiC after flash lamp annealing are discussed in comparison with furnace annealing. For high concentrations the electrical activity of Al is distinctly enhanced using flash lamp annealing. For B implanted layers an enhancement is observed for concentrations < 3x10(20) cm(-3) using flash lamp annealing. The dopant outdiffusion is strong reduced. N activates by a two-step process. There is an optimum temperature-time regime.