This paper deals with the utilization of deposited oxides as gate dielectrics for MOSFETs on 4H- and 6H-SiC using the remote (R) PECVD technique. In a first step RPECVD oxides have been optimized by investigating planar MOS-diodes. Then the electric field strength of the optimized oxides has been analyzed in trench structures. A process for recessed-channel (Re) MOSFETs was developed, showing the general suitability of RPECVD oxide for trench gate structures on SiC. Finally, RPECVD oxides are compared to thermal oxides after supplying DC-stress to not self aligned (notSA) MOSFETs.