This paper reports on a study of SiC Schottky diodes focused on high current rating and high blocking voltage: 25 A / 1200 V and 1700 V, resp. With an active area of 10 mm(2) we successfully explored new ground for SiC devices. The device concept, fabrication process, yield aspects and measured results of static and dynamic characteristics as well as the temperature behavior are described. The reverse currents are ver?; low (< 500 muA) even at 125 degreesC and their temperature dependence is lower than expected by thermionic emission since tunneling mechanisms through the Schottky barrier rule the current transport at high blocking voltages.