High-voltage lateral RESURF MOSFETs in 4H-SiC have been designed and fabricated. The devices block 900 V and have a specific on-resistance of 0.5 Omega -cm(2). The optimum RESURF dose in 4H-SiC is almost an order of magnitude higher than that of silicon but this dose leads to gate oxide breakdown due to a very high electric field in the oxide. An alternate design, which helps to suppress high gate oxide field with two zones in the RESURF region, is discussed.