화학공학소재연구정보센터
Materials Science Forum, Vol.363-3, 141-143, 2001
Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy
In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing of single crystals irradiated either with 3 MeV protons or with 1 or 2 MeV electrons, respectively. The investigations were performed with positron lifetime and Doppler-broadening measurements. The differently grown ZnO single crystals show positron bulk lifetimes in the range of 159-173 ps.