Materials Science Forum, Vol.373-3, 557-560, 2001
Anisotropy of magnetoresistance in TmBa2Cu3Ox single crystal caused by reconstruction of AFM domain structure
Field-induced anisotropy of magnetoresistance in the easy-plane antiferromagnet TmBa2Cu3Ox is explained by reconstruction of magnetoelastic domain structure of the sample. Field-dependence of the anisotropy part of magnetoresistance is calculated in the framework of the phenomenologic theory.