화학공학소재연구정보센터
Materials Science Forum, Vol.384-3, 143-146, 2002
Influence of hole recombination rate on microwave detection in compensated germanium
We report on carrier heating phenomena study in compensated germanium irradiated by microwave electric field. The microwave detection in p-p(+) junction of compensated germanium was studied on the base of phenomenological theory and verified experimentally. The comparison of experimental results of electrical conductivity change of compensated germanium in microwave electric field with that of Hall measurements as well as with theoretical estimations revealed the field dependence of hole recombination rate in compensated germanium.