We present a complete Monte Carlo analysis of transport and RF noise in a short-gate n-MOSFET. Short-channel effects are observed in the static characteristics. Velocity overshoot of electrons in the channel, as well as the appearance of hot carriers are detected. P, R and C noise parameters show an important increase in their values with respect to the long-channel theory predictions due to the presence of hot electrons. NFmin is also calculated; results confirm the importance of induced gate noise on the behaviour of this parameter.