The 4H-SiC transferred electron device with the p-layer at the cathode is proposed and simulated by Monte Carlo particle technique. The very high 400 GHZ power can be delivered by the device. The simulation show strong dependence of the generation on the contact, resistance R-c. The generation threshold current and bias increase exponontially with R-c increased, What leads to the increased energy dissipation in the device,, For low energy dissipation the value R-c < 10(-6) Omegacm(2) is needed.