We present our recent results on the physical vapor transport growth of SiC bulk crystals by highlighting the crystal diameter enlargement and the quality improvement of SiC crystals. The crystal diameter enlargement process is improved with the aid of numerical simulation of the thermal profile inside the growth crucible, while the densities of crystallographic defects, such as micropipes and low angle grain boundaries, in SiC crystals are reduced by elucidating their causes and formation mechanisms. Results of the growth perpendicular to the c-axis are also presented, where stacking faults are of major concern. We report several important aspects of stacking fault formation and discuss a possible way to circumvent this problem.