Materials Science Forum, Vol.389-3, 51-54, 2002
The development of 2in 6H-SiC wafer with high thermal-conductivity
We made 2-inch, high quality N-doped and undoped 6H type SiC bulk single crystals by the sublimation method, and measured their thermal conductivities. From the temperature dependence of the thermal conductivity, we studied the mechanism of the thermal conduction in 6H-type SiC wafer, and made clear the behavior of the thermal conduction by the lattice vibration and the free carrier.