High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 x 10(3) cm(-2). The presence of a Pendellosung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.