A new growth model of SiC on (11 (2) over bar0) substrates is introduced. Under optimum growth conditions, crystal growth on (11 (2) over bar0) substrates proceeds in a two-dimensional growth mode. Sublimation growth on (11 (2) over bar0) substrates was conducted, and the effect of growth at lower temperatures was investigated. The nucleation density increases and the size of nuclei reduces at lower growth temperatures. High density nucleation of small nuclei resulted in homogeneous coalescence of islands with low defect formation, and thus the surface flatness of grown crystals was improved and pits on the surface were decreased. Lower temperatures at the initial stage of the growth and subsequent growth at higher temperatures, two-step growth, was effective to improve the quality of grown crystals on (11 (2) over bar0) substrates. The difficulty in application of two-step growth to {0001} substrates is mentioned associated with the difference of kink density on the surface.