Electrical characteristics of the low-doped thick 4H-SiC epilayers were investigated. The 4H-SiC epilayers in excess of 200 pm thick were grown in a vertical radiant-heating reactor. Schottky electrodes were employed to examine capacitance-voltage (C-V) and current-voltage (IV) characteristics of the epilayers. The net doping concentration of a 202 V m-thick epilayer was determined as N-d-N-a=6.7x10(13) cm(-3) by C-V measurement. A blocking voltage of 6.3 W was obtained for a 1 mmphi Ni/4H-SiC Schottky barrier diode (SBD) using the epilayer. The leakage current density of the SBD was 1.3 x 10(-5) A/cm(-2) at 6.0 kV.