Hydrogen etching and epitaxial growth of 4H-SiC at higher temperature of 1600-1800 degreesC have been studied using a vertical-type, quasi-hot-wall CVD reactor. The etching rate increased with increasing temperature and decreasing pressure. The growth rate considerably decreased when the temperature was increased to higher than about 1700 degreesC. This is attributed to the rapid increase in H, etching rate with increasing temperature. The growth rate increased in the lower-pressure region and decreased in the higher-pressure region as the pressure was increased. We obtained high growth rate of reaching about 70 mum/h by increasing flow rate of SiH4 source gas and H, carrier gas at 1800 degreesC. The high-rate epitaxial layer showed a narrow single peak (FWHM = 13.5 arcsec) by X-ray rocking curve, and a non-doped p-type carrier concentration of N-a-N-d = similar to7 x 10(15) cm(-3) by C-V measurement.