A hot wall CVD reactor with mechanical wafer rotation for the growth of SiC epilayers is presented. Excellent thickness uniformity is observed for nitrogen and aluminum doping. On a two inch wafer the epilayer thickness varies only 1.4% (standard deviation over mean) excluding 5mm at the wafer edges. In the same wafer area the doping concentration uniformity is around 10% (standard deviation over mean) for growth with the carrier gas mixture of 15% argon and 85% hydrogen. The doping variation decreases with increasing concentration.