Gas flows, temperatures and chemical reactions in the vertical, quasi-hot-wall CVD reactor were simulated. Temperature and gas velocity distributions were simulated using electro-magnetic program and computed flow dynamic code. It was indicated that the uniform temperature distribution could be achieved on susceptor surface by adopting novel susceptor structure with heat bath. The experimental results showed that the growth rates decrease with increasing temperatures in the present high-temperature region (1600-1800degreesC). The growth rates were modeled based on the competing reactions of deposition and etching. The simulated temperature dependence of growth rates qualitatively showed the same tendency as those of experimental results. The SiC deposition at high-temperature was analyzed by separating the effects of source gas and etching byproducts.