We have carried out homoepitaxial growth of 3C-SiC on thick 3C-SiC free standing crystals and evaluated the characteristics of the epilayers by Nomarski differential interference contrast microscopy (NDIC), atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. We fabricated Schottky barrier structures on these epilayers and investigated the junction properties. We found that the current-voltage (I-V) characteristics of the Schottky barrier junctions (SBJs) exceed the theoretical limit of Si diodes.