A low-cost approach to 3C-SiC low pressure chemical vapour deposition (LPCVD) growth and patterning have been developed and is described. LPCVD with ultra violet (UV) stimulation is used as a technique for the low-temperature growth of SiC on Si with a patterned SiO2 or silicon nitride mask. Examples of surface micromachined structures patterned by the described lift-off approach with an excellent etching selectivity of Si to SiC are presented. The approach to growth and patterning of SiC on Si can be employed for further pendeo-epitaxial growth or fabrication of micromechanical devices, gas sensors, or biomedical applications.