We have successfully grown extremely thin, quasi-single-domain 3C-SiC films on resistively heated on-aixs Si(001) substrate by forming a low-temperature interfacial buffer layer using monomethylsilane (CH3-SiH3). The thickness of the film is as thin as 45-100 nm, which is compared to that required in a previous study (>5 mum). Both the Si(001)2x1 single-domain and the Si(001)2x1+1x2 double-domain surfaces were found to successfully yield quasi-single-domain 3C-SiC(001)2x3 films. The observed development of the single domain is understood in terms of the electromigration during resistive heating as well as the unique adsorption nature of the monomethylsilane.