In the present theoretical study the attempt was undertaken to estimate chemical bonding and lattice distortions caused by the vanadium impurity in silicon carbide. The calculation is based on the cluster X-alpha-DV and tight-binding theory within Harrison bonding orbital methods. Results on vanadium are compared with Ti and Ni 3d-impurties. It is found that vanadium atoms can substitute both Si and C and have a local magnetic moment, while Ti and Ni atoms are in the nonmagnetic state.