Materials Science Forum, Vol.389-3, 601-604, 2002
UV scanning photoluminescence spectroscopy investigation of 6H-and 4H-SiC
We report on a scanning photoluminescence (SPL) apparatus with UV excitation (244 nm) developed for SiC analysis. Examples of the effectiveness of this technique to characterize SiC are developed. Indeed, we demonstrate that SPL can be used for micropipe and screw dislocation density determination and for polytypes inclusion mapping. The gettering effect of non radiative traps in the vicinity of screw dislocations is evidenced by spectral measurements.