Interaction of hydrogen with Al acceptors and lattice damage related defects in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in the relative intensity of Al bound exciton (AI-BE) PL. Another effect of hydrogenation is a passivation of lattice damage related emission D-I. Earlier reported gradual quenching of remaining Al-BE photoluminescence in hydrogenated samples under excitation with above band-gap light was investigated at different temperatures. A possible mechanism of the Al-BE quenching at low temperatures and its possible connection with the usually limited degree of Al electrical passivation are discussed.