Defect induced transverse optic (TO) modes have been measured in alpha- and beta-SiC crystals. Depth distribution of defects in homo-epitaxial 3C-SiC films has been obtained from Raman image measurement of the TO band at a forbidden configuration. The influence of defects on the local electrical properties in 4H-SiC has also been studied using the LO phonon plasmon coupled mode as a monitor band. It is observed that the carrier density and/or mobility decrease at around macro defects.