Metal/SiC-interface reaction was investigated by Raman scattering. The specimen consisted of a Ti layer deposited on a both-side polished 6H-SiC wafer with post-annealing at various temperatures in 500-1100degreesC. The Raman spectra were observed by back scattering from both the Ti layer side and the SiC wafer side. The spectra showed formation of titanium silicide and titanium carbide. Formation of carbon clusters was also evidenced. The result shows that Raman scattering is a useful tool for studying metal/SiC interface reactions.