Scanning capacitance microscopy (SCM) of a SiC multiple pn junction structure is presented. The structure was grown by cold-wall atmospheric-pressure chemical vapor deposition using silane, propane and hydrogen. Nitrogen and diborane were used for n- and p-type doping gases, respectively. From secondary ion mass spectrometry (SIMS), it was confirmed that a multiple pn junction consists of 0.2 mum-thick n-type layer and 0.3 mum-thick p-type layer with a doping level of 1.5x10(17) cm(-3) was successfully grown. The multiple pn junction structure was clearly resolved by SCM and scanning electron microscopy (SEM).