The influence of the excited states of acceptors on the hole concentration in p-type SiC is investigated theoretically and experimentally. Using the temperature dependence of the hole concentration p(T) in Al-doped 6H-SiC wafers, a distribution function suitable for deep acceptors is examined. From the discussion, it is found that we cannot ignore the influence of the excited states on p(T) as well as the ensemble average of the ground and excited state levels of the acceptor when the acceptor level is deep.