We have investigated the formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on p(+)-Si(100) substrates. The surface morphology and current-voltage characteristics were observed by means of atomic force microscopy. The current peaks and negative differential resistance were observed in the current-voltage curves. Numerical calculations showed that the observed current-voltage characteristics were due to the hole resonant tunneling through the SiC double barrier structure.