The regrowth mechanism of the implantation-induced amorphous layers in (1100) and (1120) oriented SiC have been investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy. The amorphous layers on (1 (1) over bar 00) and (11 (2) over bar0) oriented SiC can be regrown epitaxially by post-implantation annealing above 700 degreesC in accordance with the atomic stacking sequence of the polytype structure at the interface between the amorphous layer and underlying substrate. The recrystallization of the amorphous layers on (IT 00) and (1120) oriented SiC shows the uniform regrowth rates, which is two orders of magnitude larger than that for regrowth of 3C-SiC from the amorphous layer on (0001) oriented SiC The activation energy of the regrowth rate is estimated to be 3.4 eV. The solid phase epitaxy of the implantation-induced amorphous layer would lead to the low temperature ion-implantation processes.