The possibilities for using of Al ion implanted p(+)n junctions for different 4H-SiC devices were investigated. It has been shown that a thin low resistivity p(+)-layers can be formed in 4H-SiC pure CVD epitaxial layers with Al ion implantation followed by short high temperature annealing. These layers provide for reduction of resistance in diode structures and the increase of the hole injection in forward direction in them. Al ion implanted p(+)nn(+) diode structures with differencial resistance of 3x10(-3) Omega cm(-2) were obtained. Also the advantages of shallow Al ion implanted p(+)n junctions for the detectors of UV radiation and alpha-particles were determined.