The mask applied for the high-energy and the high-temperature ion implantation is fabricated using the CVD (Chemical Vapor Deposition) silicon dioxide. We obtained the mask of the line width of 1.2 mu m and the thickness of 3.2 mu m. This mask is cut the penetratin of the energy of over 1 MeV Aluminum ion implantation and is used at the temperature of over 500degreesC.